NTMFS5C645NLT1G

Manufacturer :

Rochester Electronics

Product Category :

晶体管 - FET、MOSFET - 单

Current - Continuous Drain (Id) @ 25°C :

22A (Ta), 100A (Tc)

Drain to Source Voltage (Vdss) :

60 V

Drive Voltage (Max Rds On, Min Rds On) :

4.5V, 10V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

34 nC @ 10 V

Input Capacitance (Ciss) (Max) @ Vds :

2200 pF @ 50 V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 175°C (TJ)

Package / Case :

8-PowerTDFN, 5 Leads

Part Status :

Active

Power Dissipation (Max) :

3.7W (Ta), 79W (Tc)

Rds On (Max) @ Id, Vgs :

4mOhm @ 50A, 10V

Supplier Device Package :

5-DFN (5x6) (8-SOFL)

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

2V @ 250µA