FF650R17IE4DPB2BOSA1

Manufacturer :

Infineon Technologies

Product Category :

晶体管 - IGBT - 模块

Configuration :

2 Independent

Current - Collector (Ic) (Max) :

650 A

Current - Collector Cutoff (Max) :

5 mA

IGBT Type :

Trench Field Stop

Input :

Standard

Input Capacitance (Cies) @ Vce :

54 nF @ 25 V

Mounting Type :

Chassis Mount

NTC Thermistor :

Yes

Operating Temperature :

-40°C ~ 150°C

Package / Case :

Module

Part Status :

Active

Power - Max :

-

Supplier Device Package :

Module

Vce(on) (Max) @ Vge, Ic :

2.45V @ 15V, 650A

Voltage - Collector Emitter Breakdown (Max) :

1700 V