HAT1047RWS-E

Manufacturer :

Renesas Electronics Corporation

Product Category :

晶体管 - FET、MOSFET - 单

Current - Continuous Drain (Id) @ 25°C :

14A (Ta)

Drain to Source Voltage (Vdss) :

30 V

Drive Voltage (Max Rds On, Min Rds On) :

4.5V, 10V

FET Feature :

-

FET Type :

P-Channel

Gate Charge (Qg) (Max) @ Vgs :

64 nC @ 10 V

Input Capacitance (Ciss) (Max) @ Vds :

3500 pF @ 10 V

Mounting Type :

Surface Mount

Operating Temperature :

150°C

Part Status :

Obsolete

Power Dissipation (Max) :

2.5W (Ta)

Rds On (Max) @ Id, Vgs :

12mOhm @ 7A, 10V

Supplier Device Package :

8-SOP

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

2.5V @ 1mA