CTLDM7120-M621H TR

Manufacturer :

Central Semiconductor

Product Category :

晶体管 - FET、MOSFET - 单

Current - Continuous Drain (Id) @ 25°C :

1A (Ta)

Drain to Source Voltage (Vdss) :

20 V

Drive Voltage (Max Rds On, Min Rds On) :

1.5V, 4.5V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

2.4 nC @ 4.5 V

Input Capacitance (Ciss) (Max) @ Vds :

220 pF @ 10 V

Mounting Type :

Surface Mount

Operating Temperature :

-65°C ~ 150°C (TJ)

Package / Case :

6-XFDFN Exposed Pad

Part Status :

Obsolete

Power Dissipation (Max) :

1.6W (Ta)

Rds On (Max) @ Id, Vgs :

100mOhm @ 500mA, 4.5V

Supplier Device Package :

TLM621H

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

8V

Vgs(th) (Max) @ Id :

1.2V @ 1mA