FDS2170N7

Manufacturer :

onsemi

Product Category :

晶体管 - FET、MOSFET - 单

Current - Continuous Drain (Id) @ 25°C :

3A (Ta)

Drain to Source Voltage (Vdss) :

200 V

Drive Voltage (Max Rds On, Min Rds On) :

10V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

36 nC @ 10 V

Input Capacitance (Ciss) (Max) @ Vds :

1292 pF @ 100 V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Part Status :

Obsolete

Power Dissipation (Max) :

3W (Ta)

Rds On (Max) @ Id, Vgs :

128mOhm @ 3A, 10V

Supplier Device Package :

8-SO

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

4.5V @ 250µA