IRL1004LPBF

Manufacturer :

Infineon Technologies

Product Category :

晶体管 - FET、MOSFET - 单

Current - Continuous Drain (Id) @ 25°C :

130A (Tc)

Drain to Source Voltage (Vdss) :

40 V

Drive Voltage (Max Rds On, Min Rds On) :

4.5V, 10V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

100 nC @ 4.5 V

Input Capacitance (Ciss) (Max) @ Vds :

5330 pF @ 25 V

Mounting Type :

Through Hole

Operating Temperature :

-55°C ~ 175°C (TJ)

Package / Case :

TO-262-3 Long Leads, I²Pak, TO-262AA

Part Status :

Obsolete

Power Dissipation (Max) :

3.8W (Ta), 200W (Tc)

Rds On (Max) @ Id, Vgs :

6.5mOhm @ 78A, 10V

Supplier Device Package :

TO-262

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±16V

Vgs(th) (Max) @ Id :

1V @ 250µA