BSS83PE6327

Manufacturer :

Infineon Technologies

Product Category :

晶体管 - FET、MOSFET - 单

Current - Continuous Drain (Id) @ 25°C :

330mA (Ta)

Drain to Source Voltage (Vdss) :

60 V

Drive Voltage (Max Rds On, Min Rds On) :

4.5V, 10V

FET Feature :

-

FET Type :

P-Channel

Gate Charge (Qg) (Max) @ Vgs :

3.57 nC @ 10 V

Input Capacitance (Ciss) (Max) @ Vds :

78 pF @ 25 V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

TO-236-3, SC-59, SOT-23-3

Part Status :

Obsolete

Power Dissipation (Max) :

360mW (Ta)

Rds On (Max) @ Id, Vgs :

2Ohm @ 330mA, 10V

Supplier Device Package :

PG-SOT23

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

2V @ 80µA