SSM10N954L,EFF

Manufacturer :

Toshiba Electronic Devices and Storage Corporation

Product Category :

晶体管 - FET、MOSFET - 单

Current - Continuous Drain (Id) @ 25°C :

13.5A (Ta)

Drain to Source Voltage (Vdss) :

12 V

Drive Voltage (Max Rds On, Min Rds On) :

2.5V, 4.5V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

25 nC @ 4 V

Input Capacitance (Ciss) (Max) @ Vds :

-

Mounting Type :

Surface Mount

Operating Temperature :

150°C

Package / Case :

10-SMD, No Lead

Part Status :

Active

Power Dissipation (Max) :

800mW (Ta)

Rds On (Max) @ Id, Vgs :

2.75mOhm @ 6A, 4.5V

Supplier Device Package :

TCSPAC-153001

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±8V

Vgs(th) (Max) @ Id :

1.4V @ 1.11mA