IRF300P227

Manufacturer :

Rochester Electronics

Product Category :

晶体管 - FET、MOSFET - 单

Current - Continuous Drain (Id) @ 25°C :

50A (Tc)

Drain to Source Voltage (Vdss) :

300 V

Drive Voltage (Max Rds On, Min Rds On) :

10V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

107 nC @ 10 V

Input Capacitance (Ciss) (Max) @ Vds :

4893 pF @ 50 V

Mounting Type :

Through Hole

Operating Temperature :

-55°C ~ 175°C (TJ)

Package / Case :

TO-247-3

Part Status :

Active

Power Dissipation (Max) :

313W (Tc)

Rds On (Max) @ Id, Vgs :

40mOhm @ 30A, 10V

Supplier Device Package :

PG-TO247-3

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

4V @ 270µA