TPC8212-H(TE12LQ,M

Manufacturer :

Toshiba Electronic Devices and Storage Corporation

Product Category :

晶体管 - FET、MOSFET - 阵列

Current - Continuous Drain (Id) @ 25°C :

6A

Drain to Source Voltage (Vdss) :

30V

FET Feature :

Logic Level Gate

FET Type :

2 N-Channel (Dual)

Gate Charge (Qg) (Max) @ Vgs :

16nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

840pF @ 10V

Mounting Type :

Surface Mount

Operating Temperature :

150°C (TJ)

Part Status :

Obsolete

Power - Max :

450mW

Rds On (Max) @ Id, Vgs :

21mOhm @ 3A, 10V

Supplier Device Package :

8-SOP (5.5x6.0)

Vgs(th) (Max) @ Id :

2.3V @ 1mA