PDTB113ZK,115

Manufacturer :

NXP Semiconductors

Product Category :

晶体管 - 双极 (BJT) - 单，预偏置

Current - Collector (Ic) (Max) :

500 mA

Current - Collector Cutoff (Max) :

500nA

DC Current Gain (hFE) (Min) @ Ic, Vce :

70 @ 50mA, 5V

Frequency - Transition :

-

Mounting Type :

Surface Mount

Package / Case :

TO-236-3, SC-59, SOT-23-3

Part Status :

Obsolete

Power - Max :

250 mW

Resistor - Base (R1) :

1 kOhms

Resistor - Emitter Base (R2) :

10 kOhms

Supplier Device Package :

SMT3; MPAK

Transistor Type :

PNP - Pre-Biased

Vce Saturation (Max) @ Ib, Ic :

300mV @ 2.5mA, 50mA

Voltage - Collector Emitter Breakdown (Max) :

50 V