2PB710AR,115

Manufacturer :

NXP Semiconductors

Product Category :

晶体管 - 双极 (BJT) - 单

Current - Collector (Ic) (Max) :

500 mA

Current - Collector Cutoff (Max) :

10nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce :

120 @ 150mA, 10V

Frequency - Transition :

120MHz

Mounting Type :

Surface Mount

Operating Temperature :

150°C (TJ)

Package / Case :

TO-236-3, SC-59, SOT-23-3

Part Status :

Obsolete

Power - Max :

250 mW

Supplier Device Package :

SMT3; MPAK

Transistor Type :

PNP

Vce Saturation (Max) @ Ib, Ic :

600mV @ 30mA, 300mA

Voltage - Collector Emitter Breakdown (Max) :

50 V