BFG424F,115

Manufacturer :

NXP Semiconductors

Product Category :

晶体管 - 双极 (BJT) - RF

Current - Collector (Ic) (Max) :

30mA

DC Current Gain (hFE) (Min) @ Ic, Vce :

50 @ 25mA, 2V

Frequency - Transition :

25GHz

Gain :

23dB

Mounting Type :

Surface Mount

Noise Figure (dB Typ @ f) :

0.8dB ~ 1.2dB @ 900MHz ~ 2GHz

Operating Temperature :

150°C (TJ)

Package / Case :

SOT-343 Reverse Pinning

Part Status :

Obsolete

Power - Max :

135mW

Supplier Device Package :

4-SO

Transistor Type :

NPN

Voltage - Collector Emitter Breakdown (Max) :

4.5V