PQMB11Z

Manufacturer :

Nexperia

Product Category :

晶体管 - 双极 (BJT) - 阵列，预偏置

Current - Collector (Ic) (Max) :

100mA

Current - Collector Cutoff (Max) :

1µA

DC Current Gain (hFE) (Min) @ Ic, Vce :

30 @ 5mA, 5V

Frequency - Transition :

180MHz

Mounting Type :

Surface Mount

Package / Case :

6-XFDFN Exposed Pad

Part Status :

Active

Power - Max :

230mW

Resistor - Base (R1) :

10kOhms

Resistor - Emitter Base (R2) :

10kOhms

Supplier Device Package :

DFN1010B-6

Transistor Type :

2 PNP - Pre-Biased (Dual)

Vce Saturation (Max) @ Ib, Ic :

150mV @ 500µA, 10mA

Voltage - Collector Emitter Breakdown (Max) :

50V