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RN1703JE(TE85L,F)

Mfr.Part #: RN1703JE(TE85L,F)

Manufacturer: Toshiba Electronic Devices and Storage Corporation

Package/Case: -

Datasheet: Download

Description: TRANS 2NPN PREBIAS 0.1W ESV

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Manufacturer :: Toshiba Electronic Devices and Storage Corporation

Product Category :: 晶体管 - 双极 (BJT) - 阵列，预偏置

Current - Collector (Ic) (Max) :: 100mA

Current - Collector Cutoff (Max) :: 100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce :: 70 @ 10mA, 5V

Frequency - Transition :: 250MHz

Mounting Type :: Surface Mount

Package / Case :: SOT-553

Part Status :: Active

Power - Max :: 100mW

Resistor - Base (R1) :: 22kOhms

Resistor - Emitter Base (R2) :: 22kOhms

Supplier Device Package :: ESV

Transistor Type :: 2 NPN - Pre-Biased (Dual) (Emitter Coupled)

Vce Saturation (Max) @ Ib, Ic :: 300mV @ 250µA, 5mA

Voltage - Collector Emitter Breakdown (Max) :: 50V

数据列表: RN1703JE(TE85L,F)

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RN1702,LF	Toshiba Electronic Devices and Storage Corporation	5,800	NPNX2 BRT Q1BSR10KOHM Q1BER10KOH
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