BFG25AW/X,115

Manufacturer :

NXP Semiconductors

Product Category :

晶体管 - 双极 (BJT) - RF

Current - Collector (Ic) (Max) :

6.5mA

DC Current Gain (hFE) (Min) @ Ic, Vce :

50 @ 500µA, 1V

Frequency - Transition :

5GHz

Gain :

-

Mounting Type :

Surface Mount

Noise Figure (dB Typ @ f) :

1.9dB ~ 2dB @ 1GHz

Operating Temperature :

175°C (TJ)

Package / Case :

SOT-343 Reverse Pinning

Part Status :

Obsolete

Power - Max :

500mW

Supplier Device Package :

4-SO

Transistor Type :

NPN

Voltage - Collector Emitter Breakdown (Max) :

5V